Type 2N5003
Geometry
9702
Polarity PNP
Qual Level: JAN - JANTXV
Data Sheet No. 2N5003
Generic Part Number:
2N5003
REF: MIL-PRF-19500/512
Features:
Silicon power transistor for use in
high speed power switching appli-
cations.
Housed in a
TO-59
case.
Also available in chip form using
the
9702
chip geometry.
The Min and Max limits shown are
per
MIL-PRF-19500/512
which
Semicoa meets in all cases.
Rating
Symbol
Rating
Unit
Collector-Emitter Voltage
V
CEO
80
V
Collector-Base Voltage
V
CBO
100
V
Emitter-Base Voltage
V
EBO
5.5
V
Collector Current, Continuous
I
C
10
A
Collector Current, P
W
< 8.3 ms, < 1% duty cycle
I
C
15
A
Power Disipation T
A
= 25
o
C ambient
2
Watt
Derate above 25
o
C
11.4
mW/
o
C
Power Disipation T
C
= 25
o
C ambient
58
Watt
Derate above 25
o
C
331
mW/
o
C
Operating Junction Temperature
T
J
-55 to +200
o
C
Storage Temperature
T
STG
-55 to +200
o
C
Maximum Ratings
T
C
= 25
o
C unless otherwise specified
P
T
P
T
TO-59
Data Sheet No. 2N5003
OFF Characteristics
Symbol
Min
Max
Unit
Thermal Impedance
3.1
o
C/W
Collector-Emitter Breakdown Voltage
I
C
= 100 mA, I
B
= 0, pulsed
Collector-Emitter Cutoff Current
V
CE
= 40 V, V
BE
= 0, Bias Condition D
I
CEO
---
50
A
V
CE
= 60 V, V
BE
= 0, Bias Condition C
I
CES1
---
1.0
A
V
CE
= 100 V, V
BE
= 0, Bias Condition C
I
CES2
---
1.0
mA
Collector-Emitter Cutoff Current
V
CE
= 60 V, V
BE
= +2.0 V, T
C
= 150
o
C
I
CEX
---
500
A
Base-Emitter Cutoff Current
V
EB
= 4 V, I
C
= 0, Bias Condition D
I
EBO1
---
1.0
A
V
EB
= 5.5 V, I
C
= 0, Bias Condition D
I
EBO2
---
1.0
mA
Electrical Characteristics
T
C
= 25
o
C unless otherwise specified
V
V
(BR)CEO
80
---
ON Characteristics
Symbol
Min
Max
Unit
Forward Current Transfer Ratio
I
C
= 50 mA, V
CE
= 5 V
h
FE1
20
---
---
I
C
= 2.5 A, V
CE
= 5 V, pulsed
h
FE2
30
90
---
I
C
= 5.0 A, V
CE
= 5 V, pulsed
h
FE3
20
---
---
I
C
= 2.5 A, V
CE
= 5 V pulsed, T
A
= -55
o
C
h
FE4
15
---
---
Base-Emitter Voltage, Nonsaturted
I
C
= 2.5 V, V
CE
= 5 V pulsed
V
BE
---
1.45
V dc
Base-Emitter Saturation Voltage
I
C
= 2.5 A, I
B
= 250 mA, pulsed
V
BE(sat)1
---
1.45
V dc
I
C
= 5 A, I
B
= 500 mA, pulsed
V
BE(sat)2
---
2.2
V dc
Small Signal Characteristics
Symbol
Min
Max
Unit
Magnitude of Common Emitter Small Signal
Short Circuit Forward Current Transfer Ratio
V
CE
= 5 V, I
C
= 500 mA, f = 10 MHz
Common Emitter, Small Signal Short Circuit
Forward Current Transfer Ratio
V
CE
= 5 V, I
C
= 100 mA, f = 1 kHz
Open Circuit Output Capacitance
V
CB
= 10 V, I
E
= 0, f = 1 MHz
h
fe
20
---
---
C
OBO
---
250
pF
---
|h
fe
|
6
---
Switching Time
Symbol
Min
Max
Unit
Delay Time
I
C
= 5 A, I
B1
= 500 mA
Storage Time
I
B2
= -500 mA
Fall Time
V
BE(off)
= 3.7 V
Turn-Off Time
R
L
= 6 ohms
s
t
ON
---
0.5
t
s
---
1.4
s
0.5
s
t
OFF
---
1.5
s
t
f
---
PDF 
ZIP